Monte Carlo Simulation of Multiplication Factor in PIN In0.52Al0.48As Avalanche Photodiodes

نویسندگان

  • M. A. Mansouri-Birjandi University of Sistan and Baluchestan
  • M. Soroosh Shahid Chamran University
چکیده مقاله:

In this paper, we calculate electron and hole impactionization coefficients in In0.52Al0.48As using a Monte Carlo modelwhich has two valleys and two bands for electrons and holesrespectively. Also, we calculate multiplication factor for electronand hole initiated multiplication regimes and breakdown voltagein In0.52Al0.48As PIN avalanche photodiodes. To validate themodel, we compare our simulated results with the experimentalresults.

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monte carlo simulation of multiplication factor in pin in0.52al0.48as avalanche photodiodes

in this paper, we calculate electron and hole impactionization coefficients in in0.52al0.48as using a monte carlo modelwhich has two valleys and two bands for electrons and holesrespectively. also, we calculate multiplication factor for electronand hole initiated multiplication regimes and breakdown voltagein in0.52al0.48as pin avalanche photodiodes. to validate themodel, we compare our simulat...

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monte carlo simulation of multiplication factor in pin in0.52al0.48as avalanche photodiodes

in this paper, we calculate electron and hole impactionization coefficients in in0.52al0.48as using a monte carlo modelwhich has two valleys and two bands for electrons and holesrespectively. also, we calculate multiplication factor for electronand hole initiated multiplication regimes and breakdown voltagein in0.52al0.48as pin avalanche photodiodes. to validate themodel, we compare our simulat...

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عنوان ژورنال

دوره 1  شماره 1

صفحات  21- 24

تاریخ انتشار 2011-09-20

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